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IXFN23N100 - (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

Download the IXFN23N100 datasheet PDF. This datasheet also covers the IXFN24N100 variant, as both devices belong to the same (ixfn23n100 / ixfn24n100) hiperfet-tm power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard package.
  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride isolation.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFN24N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN230N20T GigaMOS Power MOSFET IXYS
IXFN200N06 HiPerFET Power MOSFETs IXYS
IXFN200N07 HiPerFET Power MOSFETs IXYS
IXFN200N10P Polar HiPerFET Power MOSFET IXYS
IXFN21N100Q Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN230N10 Power MOSFET
IXFN20N120 HiPerFET Power MOSFETs
IXFN20N120P Polar Power MOSFET HiPerFET
IXFN24N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET
IXFN24N100F HiPerRF Power MOSFETs

Full PDF Text Transcription

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -55 ... +150 150 -55 ...
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