Click to expand full text
Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C TJ = 25°C to 150°C; RGS = 1 MΩ
IXFN 230N10
D
VDSS ID25
RDS(on) t rr
= 100 V = 230 A = 6 mW < 250 ns
G S
S
Maximum Ratings 100 100 ± 20 ± 30 230 100 920 150 64 4 5 700 -55 ... +150 150 -55 ...
IXFN230N10 Datasheet
