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IXFN200N07 - HiPerFET Power MOSFETs

Download the IXFN200N07 datasheet PDF. This datasheet also covers the IXFN200N06 variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages.
  • miniBLOC with Aluminium nitride isolation.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFN200N06_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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IXFN24N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN200N06 HiPerFET Power MOSFETs
IXFN200N10P Polar HiPerFET Power MOSFET
IXFN21N100Q Power MOSFET
IXFN220N20X3 Power MOSFET
IXFN230N20T GigaMOS Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V ID25 200 A 180 A 200 A trr £ 250 ns RDS(on) 6 mW 7 mW 6 mW Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C; Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C 200N06/200N07 180N07 N07 N06 N07 N06 Maximum Ratings 70 60 70 60 ±20 ±30 200 180 100 600 100 30 2 5 520 -55 ... +150 150 -55 ...
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