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IXFN230N20T - GigaMOS Power MOSFET

Features

  • International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN230N20T RDS(on) ≤ ≤ trr VDSS ID25 = = 200V 230A 7.5mΩ 200ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 200 200 ±20 ±30 220 200 630 100 3 20 1090 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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