Datasheet4U Logo Datasheet4U.com

IXFN260N17T - GigaMOS Power MOSFET

Features

  • International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN26N100P Polar Power MOSFET HiPerFET IXYS Corporation
IXFN26N120P Polar Power MOSFET IXYS Corporation
IXFN20N120 HiPerFET Power MOSFETs IXYS Corporation
IXFN20N120P Polar Power MOSFET HiPerFET IXYS Corporation
IXFN230N10 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET
IXFN200N06 HiPerFET Power MOSFETs
IXFN200N07 HiPerFET Power MOSFETs
IXFN200N10P Polar HiPerFET Power MOSFET
IXFN21N100Q Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN260N17T RDS(on) ≤ ≤ trr VDSS ID25 = = 170V 245A 6.5mΩ 200ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 170 170 ±20 ±30 245 200 700 100 3 20 1090 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
Published: |