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IS42S83200C - 256Mb Single Data Rate Synchronous DRAM

Datasheet Summary

Description

IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit.

All inputs and outputs are referenced to the rising edge of CLK.

Features

  • - Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz/-7:143MHz/-75:133MHz - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Burst type- Sequential and interleave burst (programmable) - Byte Control- LDQM and UDQM (IS42S16160C) - Random column access - Auto precharge / All bank precharge controlled by A10 - Auto and.

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Datasheet Details

Part number IS42S83200C
Manufacturer ISSI
File Size 1.47 MB
Description 256Mb Single Data Rate Synchronous DRAM
Datasheet download datasheet IS42S83200C Datasheet
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IS42S83200C IS42S16160C 256 Mb Single Data Rate Synchronous DRAM APRIL 2009 General Description IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS42S83200C and IS42S16160C achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. Features - Single 3.3V ±0.3V power supply - Max.
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