IS42S83200B Datasheet PDF - Integrated Silicon Solution 256-MBIT SYNCHRONOUS DRAM Specs

IS42S83200B - 256-MBIT SYNCHRONOUS DRAM

Datasheet Summary

Description

A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM VDD Vss VDDQ VssQ NC Write Enable Data Input/Output Mask Power Ground P

Features

Clock frequency: 166, 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge www. DataSheet4U. com.
Internal bank.

Datasheet Details

Part number	IS42S83200B
Manufacturer	Integrated Silicon Solution
File Size	707.77 KB
Description	256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42S83200B Datasheet
Additional preview pages of the IS42S83200B datasheet.

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Full PDF Text Transcription

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IS42S83200B IS42S16160B 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM ISSI ® PRELIMINARY INFORMATION MAY 2006 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge www.DataSheet4U.com • Internal bank OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows. for hiding row access/precharge VDDQ VDD 3.3V 3.3V 3.3V 3.

Published: May 14, 2010 |