IS42S81600B Datasheet PDF - ISSI 8Meg x16 128-MBIT SYNCHRONOUS DRAM Specs

IS42S81600B - 8Meg x16 128-MBIT SYNCHRONOUS DRAM

This page provides the datasheet information for the IS42S81600B, a member of the IS42S16800B 8Meg x16 128-MBIT SYNCHRONOUS DRAM family.

Datasheet Summary

Description

A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM VDD Vss VDDQ VssQ NC Write Enable Data Input/Output Mask Power Ground P

Features

Clock frequency: 167, 143, 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply IS42S81600B IS42S16800B.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page) www. DataSheet4U. com.

Datasheet Details

Part number	IS42S81600B
Manufacturer	ISSI
File Size	646.46 KB
Description	8Meg x16 128-MBIT SYNCHRONOUS DRAM
Datasheet	IS42S81600B Datasheet
Additional preview pages of the IS42S81600B datasheet.

📁 Similar Datasheet

IS42S81600A - 128-MBIT SYNCHRONOUS DRAM (Integrated Circuit Solution)

IS42S83200B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

IS42S83200D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

IS42S86400B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)

IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM (Integrated Silicon Solution)

IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)

IS42S16128 - 128K words x 16 Bits x 2 Banks SDRAM (Integrated Silicon)

IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

IS42S16160B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

IS42S16160D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)

Full PDF Text Transcription

Click to expand full text

IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM ISSI MAY 2006 ® FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S81600B IS42S16800B • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) www.DataSheet4U.com OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. VDDQ VDD 3.3V 3.3V 3.3V 3.

Published: Jul 21, 2007 |