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IRHM9260 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Cu.

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Datasheet Details

Part number IRHM9260
Manufacturer IRF
File Size 123.63 KB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHM9260 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 93858 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM9260 100K Rads (Si) IRHM93260 300K Rads (Si) RDS(on) 0.160Ω 0.160Ω IRHM9260 JANSR2N7426 200V, P-CHANNEL REF: MIL-PRF-19500/660 RAD-Hard ™ HEXFET TECHNOLOGY ® I D QPL Part Number -27A JANSR2N7426 -27A JANSF2N7426 TO-254AA International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).