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IRHM93150 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage S.

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www.DataSheet4U.com PD - 90889D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080 Ω IRHM93150 300K Rads (Si) 0.080 Ω ID -22A -22A IRHM9150 JANSR2N7422 100V, P-CHANNEL REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7422 JANSF2N7422 International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).