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IRHM9250 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava.

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Datasheet Details

Part number IRHM9250
Manufacturer IRF
File Size 133.12 KB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHM9250 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91299D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® RDS(on) I D QPL Part Number 0.315Ω -14A JANSR2N7423 0.315Ω -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.