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IRHM9150 - Radiation Hardened Power MOSFET

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage S.

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Datasheet Details

Part number IRHM9150
Manufacturer IRF
File Size 136.57 KB
Description Radiation Hardened Power MOSFET
Datasheet download datasheet IRHM9150 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 90889D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080 Ω IRHM93150 300K Rads (Si) 0.080 Ω ID -22A -22A IRHM9150 JANSR2N7422 100V, P-CHANNEL REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7422 JANSF2N7422 International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.