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BUZ31H3046 - N-Channel MOSFET

Features

  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – BUZ31H3046

Datasheet Details

Part number BUZ31H3046
Manufacturer INCHANGE
File Size 231.15 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ31H3046 Datasheet
Additional preview pages of the BUZ31H3046 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUZ31H3046 ·FEATURES ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 14.5 A IDM Drain Current-Single Pulsed 58 A PD Total Dissipation @TC=25℃ 95 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.32 ℃/W isc website：www.iscsemi.
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