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BUZ31 - N-Channel MOSFET

Features

  • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max).
  • High current capability.
  • 150℃ operating temperature.
  • High speed switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – BUZ31

Datasheet Details

Part number BUZ31
Manufacturer INCHANGE
File Size 225.04 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ31 Datasheet
Additional preview pages of the BUZ31 datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 14.5 A IDM Drain Current-Single Plused 58 A Ptot Total Dissipation@TC=25℃ 95 W Tj Max.
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