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BUZ31 - Power MOS Transistors

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Datasheet Details

Part number BUZ31
Manufacturer Comset Semiconductors
File Size 156.07 KB
Description Power MOS Transistors
Datasheet download datasheet BUZ31 Datasheet
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Full PDF Text Transcription

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SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Ratings http://www.DataSheet4U.net/ Value 200 14.5 58 14.5 9 200 20 0.2 95 -55 to +150 -55 to +150 Unit V A Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.
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