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SEMICONDUCTORS
BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
FEATURE
This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope.
ABSOLUTE MAXIMUM RATINGS Symbol
VDS VSD IDS IDM VGS RDS(on) PT tJ tstg tL
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