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BUZ30A - N-Channel MOSFET

Features

  • Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max).
  • High current capability.
  • 150℃ operating temperature.
  • High speed switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – BUZ30A

Datasheet Details

Part number BUZ30A
Manufacturer INCHANGE
File Size 224.80 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ30A Datasheet
Additional preview pages of the BUZ30A datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=26℃ 21 A IDM Drain Current-Single Plused 84 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
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