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isc N-Channel Mosfet Transistor
BUZ32
·FEATURES ·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=55℃
9.
BUZ32 Datasheet
