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isc Silicon NPN RF Transistor
DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for RF frontend in wideband applications in the
GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCES Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
120
mA
0.5
W
175
℃
Tstg
Storage Temperature Range
-65~150
℃
BFR540
isc website：www.iscsemi.
BFR540 Datasheet
