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BFR92A - NPN Transistor

Description

NF = 1.3 dB TYP.

High Power Gain ︱S21e︱2 = 11.5 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifi

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isc Silicon NPN RF Transistor INCHANGE Semiconductor BFR92A DESCRIPTION ·Low Noise and High Gain NF = 1.3 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain ︱S21e︱2 = 11.5 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 100 mA 0.2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
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