Datasheet4U Logo Datasheet4U.com

BFR35AP - NPN Transistor

Description

NF = 1.8 dB TYP.

︱S21e︱2 = 12.5 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion broadband amplifiers

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFR35AP NPN Silicon RF Transistor Siemens Semiconductor Group
BFR35AP Low Noise Silicon Bipolar RF Transistor Infineon Technologies AG
BFR35A NPN SILICON TRANSISTOR Siemens Semiconductor Group
BFR35AR NPN SILICON TRANSISTOR Siemens Semiconductor Group
BFR35 NPN SILICON TRANSISTOR Siemens Semiconductor Group

Other Datasheets by Inchange Semiconductor

Part Number Description
BFR106 NPN Transistor
BFR182TW NPN Transistor
BFR520 NPN Transistor
BFR540 NPN Transistor
BFR92A NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low distortion broadband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 V 20 V 15 V 2.5 V 30 mA 4 mA 0.28 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BFR35AP isc website：www.
Published: |