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BFR35AP - Low Noise Silicon Bipolar RF Transistor

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Part number BFR35AP
Manufacturer Infineon Technologies AG
File Size 600.51 KB
Description Low Noise Silicon Bipolar RF Transistor
Datasheet download datasheet BFR35AP Datasheet

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Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR35AP ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR35AP Marking Pin Configuration GEs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 15 20 20 2.5 45 4 280 150 -55 ...
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