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isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage VCES Collector-Emitter Voltage
20
V
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
100
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
12
mA
0.
BFR106 Datasheet
