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BFR505T - NPN 9 GHz wideband transistor

Description

NPN transistor in a plastic SOT416 (SC-75) package.

Fig.1 SOT416.

MAX.

1.7 UNIT V V mA mW GHz dB dB IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C

Features

  • Low current consumption.
  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.
  • SOT416 (SC-75) package.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz.
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