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HY5DU121622ALT - 512Mb DDR SDRAM

Download the HY5DU121622ALT datasheet PDF (HY5DU12822AT included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 512mb ddr sdram.

Description

and is subject to change without notice.

Hynix semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL ali.

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Note: The manufacturer provides a single datasheet file (HY5DU12822AT_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Hynix Semiconductor

Full PDF Text Transcription

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www.DataSheet4U.com HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T 512Mb DDR SDRAM HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.0/Feb. 2003 1 www.DataSheet4U.com HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T Revision History 1. Rev 0.0 (Feb. 19) 1) Datasheet Release in Preliminary version Rev. 0.0/Feb. 2003 2 www.DataSheet4U.
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