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HY5DU121622DTP - 512Mb DDR SDRAM

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS.

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Other Datasheets by SK Hynix

Part Number Description
HY5DU121622DF 512Mb DDR SDRAM
HY5DU121622DFP 512Mb DDR SDRAM
HY5DU121622DLTP 512Mb DDR SDRAM
HY5DU121622ALT 512Mb DDR SDRAM
HY5DU121622AT 512Mb DDR SDRAM

Full PDF Text Transcription

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512Mb DDR SDRAM HY5DU12822D(L)TP HY5DU121622D(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan 2007 1 www.DataSheet.in 1Preliminary HY5DU12822DTP HY5DU121622DTP Revision History Revision No. 0.1 History First version for internal review Draft Date Jan. 2007 Remark Rev. 0.1 / Jan 2007 2 www.DataSheet.in 1Preliminary HY5DU12822DTP HY5DU121622DTP DESCRIPTION The HY5DU12822DT(P) and HY5DU121622DT(P) are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
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