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HY5DU121622DF - 512Mb DDR SDRAM

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400, 400Mbps/pin product and 500Mbps/pin product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS.

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Other Datasheets by SK Hynix

Part Number Description
HY5DU121622DFP 512Mb DDR SDRAM
HY5DU121622DLTP 512Mb DDR SDRAM
HY5DU121622DTP 512Mb DDR SDRAM
HY5DU121622ALT 512Mb DDR SDRAM
HY5DU121622AT 512Mb DDR SDRAM

Full PDF Text Transcription

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512Mb DDR SDRAM HY5DU12822DF(P) HY5DU121622DF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / May 2007 1 www.DataSheet.in 1 HY5DU12822DF(P) / HY5DU121622DF(P) Revision History Revision No. 0.01 1.0 History First version for internal review Final Version Release Draft Date Jan. 2007 May 2007 Remark Rev 1.0 / May 2007 2 www.DataSheet.in 1 HY5DU12822DF(P) / HY5DU121622DF(P) DESCRIPTION The HY5DU12822DF(P) and HY5DU121622DF(P) are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
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