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HY5DU121622C - 512 Mb DDR SDRAM

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V ± 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs o.

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512Mb DDR SDRAM HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Mar. 2005 1 HY5DU12822C(L)TP HY5DU121622C(L)TP 1HY5DU12422C(L)TP Revision History Revision No. 1.0 First Version Release History Draft Date Mar. 2005 Remark Rev. 1.0 / Mar. 2005 2 HY5DU12822C(L)TP HY5DU121622C(L)TP 1HY5DU12422C(L)TP DESCRIPTION The HY5DU12422C(L)TP, HY5DU12822C(L)TP and HY5DU121622C(L)TP are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
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