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HMBT6520 - PNP Transistor

Download the HMBT6520 datasheet PDF. This datasheet also covers the HMBT6520_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT6520 is designed for general purpose applications requiring high breakdown voltages.

Features

  • High Collector-Emitter Breakdown Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • The HMBT6520 is complementary to HMBT6517 SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Curr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT6520_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT6520
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.13 KB
Description PNP Transistor
Datasheet download datasheet HMBT6520 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6806 Issued Date : 1996.04.10 Revised Date : 2004.09.08 Page No. : 1/4 HMBT6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The HMBT6520 is complementary to HMBT6517 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature...................................................................................................................
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