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HMBT6517 - NPN Transistor

Download the HMBT6517 datasheet PDF. This datasheet also covers the HMBT6517_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT6517 is designed for general purpose applications requiring high breakdown voltages.

Features

  • High Collector-Emitter Breakdown Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • The HMBT6517 is complementary to HMBT6520 Absolute Maximum Ratings SOT-23.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Curre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT6517_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT6517
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.00 KB
Description NPN Transistor
Datasheet download datasheet HMBT6517 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6836 Issued Date : 1994.07.20 Revised Date : 2004.09.08 Page No. : 1/4 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The HMBT6517 is complementary to HMBT6520 Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature...................................................................................................................
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