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HMBT6429 - NPN Transistor

Download the HMBT6429 datasheet PDF. This datasheet also covers the HMBT6429_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Amplifier Transistor Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collect

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Note: The manufacturer provides a single datasheet file (HMBT6429_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT6429
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.79 KB
Description NPN Transistor
Datasheet download datasheet HMBT6429 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT6429 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6810 Issued Date : 1998.07.01 Revised Date : 2004.09.08 Page No. : 1/4 Description Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................
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