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HY12P03C2 - P-Channel Enhancement Mode MOSFET

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Description

-30V/-50A RDS(ON)= 10.4mΩ(typ.) @VGS = -10V RDS(ON)= 14.2mΩ(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available P-Channel Enhancement Mode MOSFET Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5 6-8L Applications Hig

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Datasheet Details

Part number HY12P03C2
Manufacturer HUAYI
File Size 1.03 MB
Description P-Channel Enhancement Mode MOSFET
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HY12P03C2 Feature Description  -30V/-50A RDS(ON)= 10.4mΩ(typ.) @VGS = -10V RDS(ON)= 14.2mΩ(typ.) @VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available P-Channel Enhancement Mode MOSFET Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5*6-8L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information P-Channel MOSFET C2 HY12P03 YYXXXJWW G Package Code C2: PPAK5*6-8L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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