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HY1001P - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY1001P, a member of the HY1001M N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.hooyi-semi.com

Features

  • 70V/75A, RDS(ON)=7.8mΩ (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – HY1001P

Datasheet Details

Part number HY1001P
Manufacturer HOOYI
File Size 1.02 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1001P Datasheet
Additional preview pages of the HY1001P datasheet.

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Full PDF Text Transcription

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HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Information S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
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