HY1210V Datasheet PDF - HUAYI N-Channel Enhancement Mode MOSFET Specs

HY1210V - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY1210V, a member of the HY1210D N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems Ordering and Marking Information D U V HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L N

Datasheet Details

Part number	HY1210V
Manufacturer	HUAYI
File Size	1.96 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1210V Datasheet
Additional preview pages of the HY1210V datasheet.

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Full PDF Text Transcription

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HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information D U V HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

Published: Jul 12, 2025 |