• Part: HY1106S
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 4.31 MB
Download HY1106S Datasheet PDF
HUAYI
HY1106S
Features - 60V / 11A RDS(ON)= 13 m Ω (typ.) @ VGS=10V RDS(ON)=13.5mΩ (typ.) @ VGS=4.5V - Avalanche Rated - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description DD DD S Top View of SOP-8 Applications - Power Management in DC/DC Converter N-Channel MOSFET Ordering and Marking Information S HY1106 YYÿ XXXJWW G Package Code S : SOP-8 Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI...