HY1001M Datasheet PDF - HOOYI N-Channel Enhancement Mode MOSFET Specs

HY1001M - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.hooyi-semi.com

Features

70V/75A, RDS(ON)=7.8mΩ (typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Datasheet Details

Part number	HY1001M
Manufacturer	HOOYI
File Size	1.02 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1001M Datasheet
Additional preview pages of the HY1001M datasheet.

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Full PDF Text Transcription

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HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Information S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.

Published: Mar 1, 2016 |