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HMS18N10Q - N-Channel Enhancement Mode Power MOSFET

Description

The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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HMS18N10Q N-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.
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