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HMS180N06A - N-Channel Super Trench Power MOSFET

Description

The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =60V,ID =120A RDS(ON) = 2.1mΩ (Typ) @ VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ (Typ) @ VGS=4.5V (Typ:4.0mΩ).
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic diagram HMS180N06A Marking and pin assignment.

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HMS180N06A N-Channel Super Trench Power MOSFET Description The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =120A RDS(ON) = 2.1mΩ (Typ) @ VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ (Typ) @ VGS=4.5V (Typ:4.
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