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HMS100N20 - N-Channel Super Trench II Power MOSFET

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • VDS =200V,ID =100A RDS(ON)=9.3mΩ , typical (TO-220)@ VGS=10V RDS(ON)=9.3mΩ , typical (TO-263)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS100N20 HMS100N20 TO-220 HMS100N20D HMS100N20D TO-263 Reel Size - Tape width -.

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Full PDF Text Transcription (Reference)

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HMS100N20, HMS100N20D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =200V,ID =100A RDS(ON)=9.3mΩ , typical (TO-220)@ VGS=10V RDS(ON)=9.