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HMS11N65Q - 650V Super-Junction MOSFET

Download the HMS11N65Q datasheet PDF. This datasheet also covers the HMS11N65D variant, as both devices belong to the same 650v super-junction mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device offers extremely fast and robust body diode,and is suitable for telecom and power supplies.

Features

  • Much lower Ron.
  • A performance for On-state efficiency.
  • Much lower FOM for fast switching effciency HMS11N65D/Q 650V Super-Junction MOSFET VDS =650V RDS(ON) =310mΩ ID =11A.
  • RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS11N65D-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMS11N65D 650V Super-Junction MOSFET
HMS11N65F 650V N-Channel Super Junction MOSFET
HMS11N70 650V Super-Junction MOSFET
HMS11N70F 700V N-Channel Super Junction MOSFET
HMS11N70K 700V N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device offers extremely fast and robust body diode,and is suitable for telecom and power supplies.
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