HMS11N65Q
Description
The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device offers extremely fast and robust body diode,and is suitable for tele and power supplies.
- Features
- Much lower Ron- A performance for On-state efficiency
- Much lower FOM for fast switching effciency
HMS11N65D/Q
650V Super-Junction MOSFET
VDS =650V
RDS(ON) =310mΩ
ID =11A
- Ro HS PLIANT
- Application
- LED/LCD/PDP TV and monitor Lighting
- Solar/Renewable/UPS-Micro Inverter System
- Power Supplies
TO-263
DFN5- 6
- Ordering Information:
Part number Package Basic ordering unit (pcs) Normal Package Material Ordering Code Halogen Free Ordering Code
HMS11N65D TO-263 800
HMS11N65D-TO263 HMS11N65D-TO263-HF
HMS11N65Q DFN5- 6 5000
HMS11N65Q-DFN5- 6 HMS11N65Q-DFN5- 6-HF
- Absolute Maximum Ratings（TC =25℃）
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
Continuous Drain Current
TC = 25°C TC = 100°C
Pulsed drain current (TC = 25°C,...
