HMS10DN10Q - Dual N-Channel Enhancement Mode MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS10DN10Q
Manufacturer	H&M Semiconductor
File Size	1.10 MB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	HMS10DN10Q Datasheet

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HMS10DN10Q Dual N-Channel Enhancement Mode MOSFET Feature  100V/10A RDS(ON)= 74 mΩ(typ) @VGS = 10V RDS(ON)= 90 mΩ(typ) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information HMS10DN10Q YYWW Dual N -Channel MOSFET Package Code Q: DFN3*3-8L Date Code YYWW Note: Hongmei lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.Hongmei lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.