HMS12864F8V
DESCRIPTION
The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board. Byte write enable inputs,(/WE0,/WE1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are used to enable the module’s 8 bits independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. acplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module ponents may be powered from a single +3.3V DC power supply and all inputs and outputs are fully TTL-patible. Reading is
PIN ASSIGNMENT
P1 P2 Symbol Vss DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 Vss DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 Vss A0 A1 A2 A3 A4 Vss A5 A6 A7 /CE Vss PIN 1 2 3 4...
