• Part: HMS100N15
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 478.51 KB
Download HMS100N15 Datasheet PDF
H&M Semiconductor
HMS100N15
Description The HMS100N15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =150V,ID =100A RDS(ON) <7.5mΩ @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram HMS100N15 Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width HMS110N15 HMS110N15 TO-220-3L - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source...