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HMS11N65D - 650V Super-Junction MOSFET

Description

The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device offers extremely fast and robust body diode,and is suitable for telecom and power supplies.

Features

  • Much lower Ron.
  • A performance for On-state efficiency.
  • Much lower FOM for fast switching effciency HMS11N65D/Q 650V Super-Junction MOSFET VDS =650V RDS(ON) =310mΩ ID =11A.
  • RoHS.

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●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device offers extremely fast and robust body diode,and is suitable for telecom and power supplies.
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