Datasheet Details
| Part number | HM9N50K |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 703.89 KB |
| Description | 500V N-Channel MOSFET |
| Datasheet |
 HM9N50K Datasheet
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Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- 9A, 500V, RDS(on) = 0.95Ω @VGS = 10 V.
- Low gate charge ( typical 16nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability {D.
- TO-252 TO-251 ◀▲ {G.
- {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Volt.