Datasheet Details
| Part number | HM9N90 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 332.28 KB |
| Description | 900V N-Channel MOSFET |
| Datasheet |
 HM9N90 Datasheet
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Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Features
- 9.0A, 900V, RDS(on) = 1.40Ω @VGS = 10 V.
- Low gate charge ( typical 45nC).
- High ruggedness.
- Fast wsitching.
- 100% avalanche tested.
- Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).