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HM9N70 - N-Channel MOSFET

Description

Pin Description G D S TO-220 G D S TO-220F Package Marking and Ordering Information Device Marking HM9N70 Device HM9N70 Device Package TO-220/F Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Quantity - HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncem

Features

  • VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max. )@VGS=10V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology .

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Full PDF Text Transcription

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HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.)@VGS=10V  Low Dense Cell Design  Reliable and Rugged  Advanced trench process technology  Applications  Synchronous Rectification  Power Management in Inverter System Switching Time Test Circuit and Waveforms Pin Description Pin Description G D S TO-220 G D S TO-220F Package Marking and Ordering Information Device Marking HM9N70 Device HM9N70 Device Package TO-220/F Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.
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