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HM9N50I - 500V N-Channel MOSFET

Download the HM9N50I datasheet PDF. This datasheet also covers the HM9N50K variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 9A, 500V, RDS(on) = 0.95Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D.
  • TO-252 TO-251 ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM9N50K-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by H&M Semiconductor

Part Number Description
HM9N50K 500V N-Channel MOSFET
HM9N90 900V N-Channel MOSFET
HM90N02D MOSFET
HM90N07D N-Channel Trench Power MOSFET
HM90N07K N-Channel Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM9N50K/HM9N50I HM9N50K/HM9N50I 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology. Features • 9A, 500V, RDS(on) = 0.
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