Datasheet4U Logo Datasheet4U.com

HM25SDN03Q - Dual Asymmetric N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDSON and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Applications Power Management in notebook computer Portable Equipment Battery Powered Systems Ordering

Features

  • s.
  • Pin configuration VDS VGS RDSON Typ. ID Top view 12mR@10V 30V ±20V 25A 1mR@4V5.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM2007 Speech recognition HMC
HM200WD1-100 TFT LCD BOE
HM20N120AB IGBT H&M semi
HM20N120T IGBT H&M semi
HM20N120TB IGBT H&M semi

Other Datasheets by H&M Semiconductor

Part Number Description
HM250N03A N-Channel Enhancement Mode Power MOSFET
HM250N03GA N-Channel Enhancement Mode Power MOSFET
HM2596 Simple Switcher Power Converter / Step-Down Voltage Regulator
HM25N06D MOSFET
HM25N06Q MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM25SDN03Q HM25SDN03Q Dual Asymmetric N-Channel Enhancement Mode MOSFET  Features  Pin configuration VDS VGS RDSON Typ. ID Top view 12mR@10V 30V ±20V 25A 1mR@4V5  Description This device uses advanced trench technology to provide excellent RDSON and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Published: |