HM25N06Q - MOSFET

Datasheet Summary

Description

The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

Features

VDS >60V,ID =25A RDS(ON) < 20mΩ @ VGS=10V （Typ:18mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses.

H&M Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	HM25N06Q
Manufacturer	H&M Semiconductor
File Size	550.11 KB
Description	MOSFET
Datasheet	HM25N06Q Datasheet
Additional preview pages of the HM25N06Q datasheet.

📁 Similar Datasheet

HM2007 - Speech recognition (HMC)
HM200WD1-100 - TFT LCD (BOE)
HM20N120AB - IGBT (H&M semi)
HM20N120T - IGBT (H&M semi)
HM20N120TB - IGBT (H&M semi)
HM20N50F - 500V N-Channel MOSFET (H&M semi)
HM20N60A - N-Channel MOSFET (H&M semi)
HM2126 - WHITE LED DRIVER (H&M semi)
HM215WU1-300 - TFT LCD (BOE)
HM215WU1-500 - TFT LCD (BOE)

Other Datasheets by H&M Semiconductor

HM25N06D - MOSFET
HM25N08D - N-Channel Enhancement Mode Power MOSFET
HM250N03A - N-Channel Enhancement Mode Power MOSFET
HM250N03GA - N-Channel Enhancement Mode Power MOSFET
HM2596 - Simple Switcher Power Converter / Step-Down Voltage Regulator
HM25P03D - P-Channel Enhancement Mode Power MOSFET
HM25P03K - P-Channel Enhancement Mode Power MOSFET
HM25P03Q - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jul 1, 2025 |